# Download Aasimar & Tiefling: A Guidebook To The Planetouched (Races by Robert J. Schwalb, James Ryman PDF

By Robert J. Schwalb, James Ryman

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In the cut-off region, the base current is zero and the device is capable of blocking forward voltage. In the active region, the collector current is determined by the base current (ic = βib ). In the active region of operation the device dissipation is high. In the saturated region, the base is overdriven (ib ≥ ic /β). The device drops a small forward voltage and the current is determined by the external circuit. When used as a switch, the transistor is operated in the cut-off and saturated regions to achieve OFF and ON states respectively.

1 V and a dynamic resistance of 8 mΩ. Evaluate the average conduction loss in the device for this application. 0ms Fig. 6: Loss Calculation. 83A ; Iav = 50A 2 P = (Iav Vt ) + Irms Rd ; P = 55W 7. Figure 7 shows the periodic current through a power-switching device in a switching converter application. (A) Evaluate the average current through the device. (B) Evaluate the rms current through the device. 2 V and a MOSFET with an of 150 mΩ are considered for this application. Evaluate the conduction loss in the device in either case.

The switching process may be seen to be a combination of the switching performance of a MOSFET and a BJT. Just as in a transistor, the current rise in region 1 and the voltage build up in the region 2 are determined by the external circuit. 21: Switching Characteristics of IGBT The important specifications of the IGBT are • Peak and average current (to assess suitability with a power circuit) • Peak blocking voltage Vces (to assess suitability with a power circuit) • ON state voltage Vce(sat) (to assess conduction loss) • OFF stage current Ices (to assess blocking loss) • Thermal impedance (to help thermal design) • Switching times td , tr , ts , tf (to design drive circuit and to select switching frequency) 26 Power Switching Devices - Characteristics • Threshold voltage Vge(th) (to design drive circuit) • Safe operating areas SOA (to design switching protection) The links to data sheets of a typical IGBT HGTG30N120D2 and a two quadtant IGBT half bridge CM50DY28 are given in Appendix F.